Reconfigurable Dipole-Induced Resistive Switching of MoS2 Thin Layers on Nb:SrTiO3
- 주제(키워드) MoS2 , high-k dielectrics , MoS2-oxide heterostructure , reconfigurability , resistive switching , induced dipole
- 주제(기타) Nanoscience & Nanotechnology; Materials Science, Multidisciplinary
- 설명문(일반) [Yoon, Woo Young; Jin, Hye-Jin; Jo, William] Ewha Womans Univ, Dept Phys, Seoul 03760, South Korea
- 등재 SCIE, SCOPUS
- 발행기관 AMER CHEMICAL SOC
- 발행년도 2019
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000166058
- 본문언어 영어
- Published As http://dx.doi.org/10.1021/acsami.9b15097
- PubMed https://pubmed.ncbi.nlm.nih.gov/31718123
초록/요약
The controllable band gap and charge-trapping capability of MoS2 render it suitable for use in the fabrication of various electrical devices with high-k dielectric oxides. In this study, we investigated reconfigurable resistance states in a MoS2/Nb:SrTiO3 heterostructure by using conductive atomic force microscopy. Low-resistance and high resistance states were observed in all MoS2 because of barrier height modification resulting from redistribution of charge and oxygen vacancies in the vicinity of interfaces. In a thin layer of the MoS2 film, the carrier density was high, and layer-dependent transport properties appeared because of the charge separation in MoS2. The hysteresis and switching voltage of the MoS2/Nb:SrTiO3 heterostructure could be varied by controlling the number of layers of MoS2.
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