Charge Based Current-Voltage Model for the Silicon on Insulator Junctionless Field-Effect Transistor
- 주제(키워드) Junctionless Field-Effect Transistor (JLFET) , Silicon on Insulator Junctionless Field-Effect Transistor (SOI-JLFET) , Charge-Based , Current-Voltage Model , Current Model , Circuit Simulation
- 주제(기타) Chemistry, Multidisciplinary
- 주제(기타) Nanoscience & Nanotechnology
- 주제(기타) Materials Science, Multidisciplinary
- 주제(기타) Physics, Applied
- 주제(기타) Physics, Condensed Matter
- 설명문(일반) [Jeong, Yongjin; Park, Jisun; Shin, Hyungsoon] Ewha Womans Univ, Dept Elect & Elect Engn, Seoul 03760, South Korea; [Kang, In Man] Kyungpook Natl Univ, Sch Elect Engn, Daegu 702701, South Korea; [Cho, Seongjae] Gachon Univ, Dept Elect Engn, Gyeonggi Do 461701, South Korea
- 등재 SCIE, SCOPUS
- 발행기관 AMER SCIENTIFIC PUBLISHERS
- 발행년도 2020
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000169427
- 본문언어 영어
- Published As https://dx.doi.org/10.1166/jnn.2020.17795
- PubMed https://pubmed.ncbi.nlm.nih.gov/32126675
초록/요약
In this study, we propose an accurate and simple current voltage model for an SOI-JLFET based on a solution of the Poisson equation. The model is divided into three regions: accumulation, accumulation depletion, and depletion. The charge density in each region is calculated with the Poisson equation and region-specific boundary conditions, and then the current is obtained by integrating the charge density with consideration of the v(ds) effect. The proposed model, which was implemented in HSPICE using Verilog-A, was validated using TCAD simulation for various physical conditions such as SOI channel thickness, gate oxide thickness, and channel doping concentration type. According to simulation results by the error rate calculation, our model shows more than 90% accuracy.
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