Selective-Area Remote Epitaxy of ZnO Microrods Using Multilayer-Monolayer-Patterned Graphene for Transferable and Flexible Device Fabrications
- 주제(키워드) Remote epitaxy , selective-area epitaxy , graphene , ZnO , hydrothermal growth , flexible device
- 주제(기타) Nanoscience & Nanotechnology
- 주제(기타) Materials Science, Multidisciplinary
- 설명문(일반) [Jeong, Junseok; Jin, Dae Kwon; Hong, Young Joon] Sejong Univ, Dept Nanotechnol & Adv Mat Engn, Seoul 05006, South Korea; [Jeong, Junseok; Jin, Dae Kwon; Cha, Janghwan; Choi, Joonghoon; Kim, Moon J.; Hong, Suklyun; Hong, Young Joon] Sejong Univ, GRI TPC Int Res Ctr, Seoul 05006, South Korea; [Cha, Janghwan; Hong, Suklyun] Sejong Univ, Dept Phys & Astron, Seoul 05006, South Korea; [Kang, Bong Kyun; Yang, Woo Seok] Korea Elect Technol Inst, Nano Mat Res Ctr, Seongnam 13509, Gyeonggi Do, South Korea; [Wang, Qingxiao; Kim, Moon J.] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA; [Lee, Sang Wook] Ewha Womans Univ, Dept Phys, Seoul 03760, South Korea; [Mikhailovskii, Vladimir Yu] St Petersburg State Univ, St Petersburg 199034, Russia; [Neplokh, Vladimir] Alferov Univ, St Petersburg 194021, Russia; [Amador-Mendez, Nuno; Tchernycheva, Maria] Univ Paris Saclay, Ctr Nanosci & Nanotechnol, UMR 9001, CNRS, F-91120 Palaiseau, France; [Yoo, Jinkyoung] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA
- 등재 SCIE, SCOPUS
- OA유형 Green Submitted
- 발행기관 AMER CHEMICAL SOC
- 발행년도 2020
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000174625
- 본문언어 영어
- Published As http://dx.doi.org/10.1021/acsanm.0c01656
초록/요약
Selective-area remote epitaxy (SA-REpi) is demonstrated for fabricating mechanically releasable position-controlled ZnO microrod (MR) arrays from donor wafers in an arrayed form. Intaglio-patterned graphene, consisting of basal single-layer graphene (SLG) overlayered with multilayer graphene (MLG) patterned with perforated holes, is transferred onto a GaN/Al2O3 wafer on which the hydrothermal synthesis is performed for growing ZnO MRs. The basal SLG area exposed through the MLG pattern yields ZnO MRs, whereas the MLG plateau inhibits the growth. The noncovalent remote epitaxial heterointerface enables the release of the MR overlayer in the arrayed form, and the original source wafer is refurbished for reproducibly repeating the SA-REpi. Density-functional theory calculations suggest that localized surface charge density is induced on the surface of SLG by the underlying GaN across ultrathin SLG, which possibly provides a driving force for precursor adatoms and the following remote epitaxy of ZnO. In contrast, the induction of the charge density redistribution does not clearly occur through MLG; so, that keeps the surface of MLG nearly charge-neutral. The diameter and spacing of ZnO MRs are controlled in a designed way by changing the pattern geometries. High-resolution scanning transmission electron microscopy reveals the remote heteroepitaxial relationship at an atomic level. The remote epitaxy is expected to provide an ideal platform to transfer the addressable spatial arrays of nano- or micro-architecture semiconductor components to arbitrary target surfaces directly after the growth without the assembly procedures.
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