Analysis of hump effect in tensile-stressed a-IGZO TFT using TCAD simulation
- 주제(키워드) 3D , A-IGZO , Bending axis , Hump , Simulation , Tensile stress , TFT
- 등재 SCOPUS
- 발행기관 Institute of Electrical and Electronics Engineers Inc.
- 발행년도 2021
- 총서유형 Journal
- 회의명 2021 International Conference on Electronics, Information, and Communication, ICEIC 2021
- 일자 31 January 2021 through 3 February 2021
- URI http://www.dcollection.net/handler/ewha/000000181374
- ISBN 9781728191614
- 본문언어 영어
- Published As http://dx.doi.org/10.1109/ICEIC51217.2021.9369787
초록/요약
In this paper, the transfer characteristic of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) under the mechanical bending stress is analyzed using technology of computer-added design (TCAD). For effective analysis, active layer is divided into two regions of intensive and normal strain with different density of state (DOS) parameter set. Also, the allocation of multi-regions varies by the bending axis based on the stress distribution in channel. Simulation result accounts for the different tendency of degradation according to bending axis and fits well with the measurement. Based on the analysis of the bending axis dependency, we suggest TCAD 3D simulation guideline for hump effect in transfer characteristic under the tensile stress. © 2021 IEEE.
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