A CMOS Optoelectronic Receiver IC with an On-Chip Avalanche Photodiode for Home-Monitoring LiDAR Sensors
- 주제(키워드) avalanche photodiode , CMOS , feedforward , limiting amplifier , optoelectronic , transimpedance amplifier
- 주제(기타) Chemistry, Analytical
- 주제(기타) Engineering, Electrical & Electronic
- 주제(기타) Instruments & Instrumentation
- 설명문(일반) [Joo, Ji-Eun; Park, Sung Min] Ewha Womans Univ, Dept Elect & Elect Engn, Seoul 03760, South Korea; [Joo, Ji-Eun; Park, Sung Min] Ewha Womans Univ, Grad Program Smart Factory, Seoul 03760, South Korea; [Lee, Myung-Jae] Korea Inst Sci & Technol, PostSilicon Semicond Inst, Seoul 02792, South Korea
- 등재 SCIE, SCOPUS
- 발행기관 MDPI
- 발행년도 2021
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000182253
- 본문언어 영어
- Published As http://dx.doi.org/10.3390/s21134364
초록/요약
This paper presents an optoelectronic receiver (Rx) IC with an on-chip avalanche photodiode (APD) realized in a 0.18-mu m CMOS process for the applications of home-monitoring light detection and ranging (LiDAR) sensors, where the on-chip CMOS P+/N-well APD was implemented to avoid the unwanted signal distortion from bondwires and electro-static discharge (ESD) protection diodes. Various circuit techniques are exploited in this work, such as the feedforward transimpedance amplifier for high gain, and a limiting amplifier with negative impedance compensation for wide bandwidth. Measured results demonstrate 93.4-dB omega transimpedance gain, 790-MHz bandwidth, 12-pA/root Hz noise current spectral density, 6.74-mu A(pp) minimum detectable signal that corresponds to the maximum detection range of 10 m, and 56.5-mW power dissipation from a 1.8-V supply. This optoelectronic Rx IC provides a potential for a low-cost low-power solution in the applications of home-monitoring LiDAR sensors.
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