New simulation method for dependency of device degradation on bending direction and channel length
- 주제(키워드) Amorphous indium-gallium-zinc-oxide (a-IGZO) , Bending stress , Channel length dependency , Device simulation , Flexible thin-film transistor (TFT) , Oxide TFT , Strain simulation
- 등재 SCIE, SCOPUS
- 발행기관 MDPI
- 발행년도 2021
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000183360
- 본문언어 영어
- Published As http://dx.doi.org/10.3390/ma14206167
초록/요약
The dependency of device degradation on bending direction and channel length is analyzed in terms of bandgap states in amorphous indium-gallium-zinc-oxide (a-IGZO) films. The strain distribution in an a-IGZO film under perpendicular and parallel bending of a device with various channel lengths is investigated by conducting a three-dimensional mechanical simulation. Based on the obtained strain distribution, new device simulation structures are suggested in which the active layer is defined as consisting of multiple regions. The different arrangements of a highly strained region and density of states is proportional to the strain account for the measurement tendency. The analysis performed using the proposed structures reveals the causes underlying the effects of different bending directions and channel lengths, which cannot be explained using the existing simulation methods in which the active layer is defined as a single region. © 2021 by the authors. Licensee MDPI, Basel, Switzerland.
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