Hybrid Silicon-Polymer Photodetector Engineered Using Oxidative Chemical Vapor Deposition for High-Performance and Bias-Switchable Multi-Functionality
- 주제(키워드) black silicon , multimodal detection , oxidative chemical vapor deposition , photodetector , poly(3 , 4-ethylene dioxythiophene)
- 등재 SCIE, SCOPUS
- 발행기관 John Wiley and Sons Inc
- 발행년도 2022
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000193517
- 본문언어 영어
- Published As https://doi.org/10.1002/adfm.202201641
초록/요약
Black silicon (b-Si) featured by anti-reflective surfaces is extensively studied to realize highly sensitive photodetectors. The key to augmenting the light-detection capability of b-Si is to facilitate charge extraction while limiting undesired recombination events at surface defects. To this end, oxidative chemical vapor deposition (oCVD) is leveraged to form a highly conformal and conductive (3000 S cm−1) organic transport layer, poly(3,4-ethylenedioxythiophene) (PEDOT), on b-Si nanostructures. The oCVD PEDOT instrumentally extracts photo-induced charges, through which b-Si photodetectors implementing oCVD PEDOT achieve a superior photo-detectivity of 1.37 × 1013 Jones. Furthermore, by engineering the pore dimension of b-Si, a mode-tunable Si photodetector is contrived, where the functions of broad-band and visible-blinded modes are switched facile by a bias polarity. The unprecedented device paves the way for extending the applications of Si detectors toward novel sensory platforms such as night-vision, motion tracking, and bio-sensing. © 2022 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH.
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