An Optoelectronic Transimpedance Amplifier in 180-nm CMOS for Short-range LiDAR Sensors
- 주제(키워드) CMOS , cross-coupled , feedforward , optoelectronic , TIA
- 주제(기타) Engineering, Electrical & Electronic; Physics, Applied
- 설명문(일반) [Hu, Yu; Joo, Ji-Eun; Park, Sung Min] Ewha Womans Univ, Dept Elect & Elect Eng, Seoul, South Korea; [Hu, Yu; Joo, Ji-Eun; Park, Sung Min] Ewha Womans Univ, Grad Program Smart Factory, Seoul, South Korea; [Lee, Myung-Jae; Park, Sung Min] Post Silicon Semicond Inst, Korea Inst Sci & Technol, Seoul, South Korea
- 등재 SCIE, SCOPUS, KCI등재
- 발행기관 IEEK PUBLICATION CENTER
- 발행년도 2022
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000203126
- 본문언어 영어
- Published As https://doi.org/10.5573/JSTS.2022.22.4.275
초록/요약
This paper presents an optoelectronic transimpedance amplifier (OTIA) implemented in a 180-nm CMOS technology, in which a P+/N-well avalanche photodiode (APD) is realized on-chip to reduce signal distortions occurring from bond-wire and I/O pad at the input node, a voltage-mode feedforward input configuration is exploited to boost the transimpedance gain, and a cross-coupled inverter-based post-amplifier (CI-PA) is added to reduce the mismatches from the previous stage. The proposed OTIA demonstrate 95.1-dBO transimpedance gain, 608-MHz bandwidth, 4.54pA/vHz noise current spectral density, 26.4- dB dynamic range that corresponds to the input currents of 2.38 mu App similar to 50 mu App, and 39.3-mW power dissipation from a single 1.8-V supply. The chip core occupies the area of 0.068 mm2.
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