Field-driven Modulation of Spin Hall Magnetoresistance in Nanoscale-layered Pt/IrMn3/NiFe Heterostructures
- 주제(키워드) spin Hall magnetoresistance , antiferromagnets , Neel order , magnetic heterostructures , tunability
- 주제(기타) Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
- 설명문(일반) [Do, Nga T.; Thi Kim Hang Pham; Kim, Tae-Hee] Ewha Womans Univ, Dept Phys, Seoul 03760, South Korea; [Do, Nga T.] Ewha Womans Univ, IBS Ctr Quantum Nanosci, Seoul 03760, South Korea; [Thi Kim Hang Pham] HCMC Univ Technol & Educ, Dept Mat Technol, Fac Appl Sci, Ho Chi Minh City 700000, Vietnam; [Park, Seung Young] Korea Basic Sci Inst, Daejeon 34133, South Korea
- 등재 SCIE, SCOPUS, KCI등재
- 발행기관 KOREAN MAGNETICS SOC
- 발행년도 2022
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000203893
- 본문언어 영어
- Published As https://doi.org/10.4283/JMAG.2022.27.4.335
초록/요약
Spin Hall magnetoresistance (SMR) emerges from both spin Hall effect (SHE) and inverse spin Hall effect (ISHE), which is usually investigated in a nonmagnetic heavy metal (NM) in contact with a ferromagnet (FM). Depending on the orientation of FM magnetization and spin polarization of NM layer, the transmission or reflection of the spin current at the FM\NM interface could occur. SMR was investigated in 1.5 nm NiFe\3.0 nm IrMn3\3.0 nm Pt magnetic heterostructures. IrMn3 thin film grown on ferromagnetic NiFe layer exhibits the glassy magnetic behavior and displays spin reorientation transition in the magnetic field-temperature space. Below the Neel temperature of IrMn3, the angle dependence of MR measurement in the xy and xz plane showed a normal positive SMR. However, a sign change in SMR was observed in the magnetic field applied in the yz plane. The switching from negative to positive SMR occurs at the field above a critical value of 6 kG. Our results provide a potential advantage for the source of spin flow in the signal in multilayer heterostructures and highlight the importance of magnetic structure (Neel vector) in AF, which opens the possible way to manipulate the spin current transportation and AF memory devices.
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