Improving the Stability of Non-fullerene-Based Organic Photovoltaics through Sequential Deposition and Utilization of a Quasi-orthogonal Solvent
- 주제(키워드) burn-in free organic photovoltaic device , non-fullerene acceptor , organic photovoltaic device stability , photoactive layer/electrode interface , sequential deposition process
- 등재 SCIE, SCOPUS
- 발행기관 American Chemical Society
- 발행년도 2023
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000208905
- 본문언어 영어
- Published As https://doi.org/10.1021/acsami.3c02071
- PubMed 37062884
초록/요약
The development of organic photovoltaic (OPV) devices based on non-fullerene acceptors (NFAs) has led to a rapid improvement in their efficiency. Despite these improvements, significant performance degradation in the early stages of operation, known as burn-in, remains a challenge for NFA-based OPVs. To address this challenge, this study demonstrates a stable NFA-based OPV fabricated using sequential deposition (SqD) and a quasi-orthogonal solvent. The quasi-orthogonal solvent, which is prepared by incorporating 1-chloronaphthalene (1-CN) into dichloromethane (DCM), reduces the vapor pressure of the solvent and allows for the efficient dissolution and penetration of the Y6 (one of efficient NFAs) into a PM6 polymer-donor layer without damaging the latter. The resulting bulk heterojunction (BHJ) is characterized by a higher degree of crystallinity in the PM6 domains than that prepared using a conventional single-step deposition (SD) process. The OPV fabricated using the SqD process exhibits a PCE of 14.1% and demonstrates superior thermal stability to the SD-processed OPV. This study conclusively reveals that the formation of a thermally stable interface between the photoactive layer and the electron-transport layer (ETL) is the primary factor contributing to the high thermal stability observed in the SqD-processed OPV. © 2023 American Chemical Society.
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