Effect of Fluorination Position on the Crystalline Structure and Stretchability of Intrinsically Stretchable Polymer Semiconductors
- 관리정보기술 faculty
- 등재 SCIE, SCOPUS
- 발행기관 American Chemical Society
- 발행년도 2023
- URI http://www.dcollection.net/handler/ewha/000000213703
- 본문언어 영어
- Published As https://doi.org/10.1021/acsmacrolett.3c00517
- PubMed 37931088
초록/요약
A clear understanding of the structure-property relationship of intrinsically stretchable polymer semiconductors (ISPSs) is essential for developing high-performance polymer-based electronics. Herein, we investigate the effect of the fluorination position on the crystalline structure, charge-carrier mobility, and stretchability of polymer semiconductors based on a benzodithiophene-co-benzotriazole configuration. Although four different polymer semiconductors showed similar field-effect mobilities for holes (μ ≈ 0.1 cm2 V-1 s-1), polymer semiconductors with nonfluorinated backbones exhibited improved thin-film stretchability confirmed with crack onset strain (ϵc ≈ 20%-50%) over those of fluorinated counterparts (ϵc ≤ 10%). The enhanced stretchability of polymer semiconductors with a nonfluorinated backbone is presumably due to the higher face-on crystallite ratio and π-π stacking distance in the out-of-plane direction than those of the other polymer semiconductors. These results provide new insights into how the thin-film stretchability of polymer semiconductors can be improved by using precise molecular tailoring without deteriorating electrical properties. © 2023 American Chemical Society.
more