A Complementary Metal-Oxide-Semiconductor Optoelectronic Analog Front-End Preamplifier with Cross-Coupled Active Loads for Short-Range LiDARs
- 주제(키워드) active-load , APD , cross-coupled , LiDAR , preamplifier , sensors
- 주제(기타) Chemistry, Analytical; Engineering, Electrical & Electronic; Instruments & Instrumentation
- 설명문(일반) [Song, Yunji; Choi, Yejin; Choi, Seonhan; Park, Sung-Min] Ewha Womans Univ, Div Elect & Semicond Engn, Seoul 03760, South Korea; [Song, Yunji; Choi, Yejin; Choi, Seonhan; Park, Sung-Min] Ewha Womans Univ, Grad Program Smart Factory, Seoul 03760, South Korea; [Jung, Dukyoo] Ewha Womans Univ, Coll Nursing, Seoul 03760, South Korea
- 등재 SCIE, SCOPUS
- OA유형 Gold
- 발행기관 MDPI
- 발행년도 2025
- URI http://www.dcollection.net/handler/ewha/000000245432
- 본문언어 영어
- Published As https://doi.org/10.3390/s25041040
- PubMed https://pubmed.ncbi.nlm.nih.gov/40006269
초록/요약
In this paper, a CMOS optoelectronic analog front-end (AFE) preamplifier with cross-coupled active loads for short range LiDAR applications is presented, which consists of a spatially modulated P+/N-well on-chip avalanche photodiode (APD), the differential input stage with cross-coupled active loads, and an output buffer. Particularly, another on-chip dummy APD is inserted at the differential input node to improve the common-mode noise rejection ratio significantly better than conventional single-ended TIAs. Moreover, the cross-coupled active loads are exploited at the output nodes of the preamplifier not only to help generate symmetric output waveforms, but also to enable the limiting operations even without the following post-amplifiers. In addition, the inductive behavior of the cross-coupled active loads extends the bandwidth further. The proposed AFE preamplifier implemented in a 180-nm CMOS process demonstrate the measured results of 63.5 dB dynamic range (i.e., 1 mu App similar to 1.5 mA(pp) input current recovery), 67.8 dB Omega transimpedance gain, 1.6 GHz bandwidth for the APD capacitance of 490 fF, 6.83 pA/root Hz noise current spectral density, 85 dB power supply rejection ratio, and 32.4 mW power dissipation from a single 1.8 V supply. The chip core occupies the area of 206 x 150 mu m(2).
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